Design Criteria for InGaAs/InP Single-Photon Avalanche Diode
نویسندگان
چکیده
منابع مشابه
A 130nm CMOS Single Photon Avalanche Diode
We report on the first implementation of a single photon avalanche diode (SPAD) in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. A guard ring of p-well around the p+ anode is used to prevent premature discharge. To investigate the dynamics of the new device, both active and passive quenching methods have been used. Single photon detection is achieved b...
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ژورنال
عنوان ژورنال: IEEE Photonics Journal
سال: 2013
ISSN: 1943-0655
DOI: 10.1109/jphot.2013.2258664